External resonator type light emitting system

ABSTRACT

An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

This application claims priority under 35 U.S.C. §119 to Japanese Patent Application No. 2013-120999, filed Jun. 7, 2013, which is incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an external resonator type light emitting system.

2. Related Art Statement

It has been generally utilized a semiconductor laser of Fabry-Perot (FP) type including an optical resonator constructed with an active layer and mirrors provided on both end faces of the active layer. However, according to such FP type laser, light is oscillated at a wavelength satisfying conditions for oscillating standing waves. The longitudinal mode thus tends to be of multi mode, and the oscillating wavelength is changed particularly when a current or temperature is changed, resulting in a change of optical intensity.

Therefore, for the purpose of optical communication or gas sensing, it is required a laser capable of single mode oscillation and with good stability of wavelength. It has been thereby developed a distributed feed-back (DFB) laser and a distributed reflection (DBR) laser. According to these laser systems, diffraction gratings are provided in a semiconductor material to oscillate light having only a specific wavelength utilizing the dependency of the gratings on wavelength.

According to the DBR laser, concaves and convexes are formed on a surface of a waveguide extended from a waveguide of the active layer to provide a mirror utilizing Bragg reflection for realizing a resonator (Patent Document 1; Japanese Patent Publication No. S49-128,689A; Japanese Patent Document 2; Japanese patent Publication No. S56-148,880A). Since diffraction gratings are provided on both ends of the optical waveguide layer according to the laser, light emitted from the active layer is propagated through the optical waveguide layer, and a part of the propagating light is reflected by the diffraction gratings, returned into a current injection part and then amplified. As light component having oily a single wavelength is reflected at a specific direction from the diffraction grating, the wavelength of the laser light is made constant.

Further, as the application, it was developed an external resonator type semiconductor laser including a diffraction grating as a part separated from the semiconductor to form an external resonator. Such type of laser provides one having stability of wavelength, stability of temperature and controllability. The external resonator includes a fiber Bragg grating (FBG) (Non-patent document 1) and a volume hologram grating (WIG) (Non-patent document 2). Since the diffraction grating is composed of a member separated from the semiconductor laser, it is characteristic that its reflectance and length of the resonator can be independently designed. And, since it does not affected by elevation of temperature rise due to heat generation caused by current injection, it is possible to further improve the stability on wavelength. Further, the temperature dependency of refractive index of the semiconductor is different, it is possible to improve the stability on temperature can be improved by designing the refractive index together with the length of the resonator.

According to Japanese Patent document 6 (Japanese Patent Publication No. 2002-134,833A), it is disclosed an external resonator type laser utilizing a grating formed in a waveguide composed of quartz glass. It aims at providing a frequency-stable laser suitably used in environment under which room temperature is considerably changed, (for example, up to 30° C. or higher) without a temperature controller. It is further described to provide a laser free from temperature dependency with mode hopping prevented and without dependency of oscillating frequency on temperature.

PRIOR ARTS

-   (Patent document 1) Japanese Patent Publication No. S49-128,689A -   (Patent document 2) Japanese Patent Publication No. S56-148,880A -   (Patent document 3) WO 2013/034,813 -   (Patent document 4) Japanese Patent Publication No. 2000-082,864A -   (Patent document 5) Japanese Patent Publication No. 2006-222,399A -   (Patent document 6) Japanese patent Publication No. 2002-134,833A -   (Non-Patent document 1) “Transactions on Fundamentals of     Electronics, Communications and Computer Sciences” C-II Vol. J81,     No. 7 pp. 664-665, 1998 July -   (Non Patent document 2) “Technical Reports on Fundamentals of     Electronics, Communications and Computer Sciences” LQE, 2005, Vol     105, No. 52, pp. 17-20

SUMMARY OF THE INVENTION

The non-patent document 1 refers to the mechanism of mode hopping deteriorating stability on wavelength accompanied with temperature rise and a method of solving it. An amount δλs of change of wavelength of an external resonator type laser depending on temperature is expressed as the following formula based on standing wave condition, provided that Δna is assigned to a change of refractive index of active layer region of a semiconductor, La is assigned to a length of the active layer, Δnf and Lf are assigned to a change of refractive index and length, respectively, of FBG region, and δTa and δTf are assigned to changes of temperatures of them, respectively.

$\begin{matrix} {{\delta\;\lambda_{s}} = {{\lambda_{0}\frac{\Delta\; n_{a}L_{a}}{{n_{f}L_{f}} + {n_{a}L_{a}}}\delta\; T_{a}} + {\lambda_{0}\frac{\Delta\; n_{f}L_{f}}{{n_{f}L_{f}} + {n_{a}L_{a}}}\delta\; T_{f}}}} & {{Formula}\mspace{14mu}(A)} \end{matrix}$

Here, λ0 represents a wavelength of reflection by a grating at initial stage.

Further, a change δλG of a wavelength of reflection of the grating is represented according to the following formula.

$\begin{matrix} {{\delta\;\lambda_{G}} = {\lambda_{0}\frac{\Delta\; n_{f}}{n_{f}}\delta\; T_{f}}} & {{Formula}\mspace{14mu}(B)} \end{matrix}$

Mode hopping is caused when a longitudinal mode spacing Δλ of the external resonator equals to a difference between the amount of change of wavelength δλs and amount δλG of change of reflection wavelength of the grating, so that the following formula is satisfied.

$\begin{matrix} {{\Delta\;\lambda} = {{\delta\;\lambda_{s}} - {\lambda_{0}\frac{\Delta\; n_{f}}{n_{f}}\delta\; T_{f}}}} & {{Formula}\mspace{14mu}(C)} \end{matrix}$

The longitudinal mode spacing Δλ is represented approximately according to the following formula.

$\begin{matrix} {{\Delta\;\lambda} = \frac{\lambda_{0}^{2}}{2\left( {{n_{f}L_{f}} + {n_{a}L_{a}}} \right)}} & {{Formula}\mspace{14mu}(D)} \end{matrix}$

Formula (E) is satisfied based on the formulas (C) and (D).

$\begin{matrix} {{\Delta\; T_{all}} = \frac{\lambda_{0}}{2\; n_{a}{L_{a}\left( {{\Delta\;{n_{a}/n_{a}}} - {\Delta\;{n_{f}/n_{f}}}} \right)}}} & {{Formula}\mspace{14mu}(E)} \end{matrix}$

For preventing the mode hopping, it is necessary to use within a temperature range smaller than ΔTall, so that the temperature is controlled by using a Peltier device. According to the formula (E), in the case that the changes of the reflective indices of the active layer and grating layer are the same (Δna/na=Δnf/nf), the denominator becomes zero and the temperature for causing the mode hopping becomes infinite value, indicating that the mode hopping would not occur. According to a monolithic type DBR laser, however, since current is injected into the active layer for laser oscillation, the changes of the refractive indices of the active layer and grating layer cannot be matched with each other, resulting in the mode hopping.

The mode hopping is the phenomenon that the oscillating mode (longitudinal mode) within the resonator is shifted from one mode to another mode. As the temperature or injection current is changed, the conditions of the gain and resonator are changed and the wavelength of the oscillated laser is thereby changed, resulting in the problem, called kink, that the optical power is deviated. In the case of an FP type GaAs semiconductor laser, therefore, the wavelength is normally changed at a temperature coefficient of 0.3 nm/° C., and more considerable deviation would occur when the mode hopping takes place. At the same time, the output is changed by 5 percent or more.

Therefore, for preventing the mode hopping, a Peltier device is used for controlling the temperature. A number of parts are thereby increased, the size of a module is enlarged and its cost is made high.

According to the patent document 6, for preventing the dependency on temperature, the structure of a prior resonator itself is maintained and a stress is applied on an optical waveguide layer to compensate a temperature coefficient due to the thermal expansion to realize the non-dependency on temperature. Therefore, a metal plate is adhered onto the device and it is further added a layer of adjusting the temperature coefficient within the waveguide. There is a problem that the resonator structure is further enlarged.

An object of the present invention is to reduce the mode hopping, to improve the stability on wavelength and to reduce the deviation of an optical power, without using a Peltier device.

The present invention provides an external resonator type light emitting system comprising a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source;

wherein the light source comprises an active layer oscillating the semiconductor laser light;

wherein the grating device comprises an optical waveguide comprising an incident face for making the semiconductor laser light incident and an emitting face of emitting an emitting light having a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating; and

wherein the following formulas (1) to (4) are satisfied. Δλ_(G)≧0.8 nm  (1) L _(b)≦500 μm  (2) L _(a)≦500 μm  (3) n _(b)≧1.8  (4)

(Δλ_(G) represents a full width at half maximum of a peak of a Bragg reflectance in the formula (1).

L_(b) represents a length of the Bragg grating in the formula (2).

L_(a) represents a length of the active layer in the formula (3).

n_(b) represents a refractive index of a material forming the Bragg grating in the formula (4).)

According to a preferred embodiment, the relationship of the following formula (5) is further satisfied.

$\begin{matrix} {{{\frac{\mathbb{d}\lambda_{G}}{\mathbb{d}T} - \frac{\mathbb{d}\lambda_{T\; M}}{\mathbb{d}T}}} \leqq {0.03\mspace{14mu}{{nm}/{^\circ}}\mspace{14mu}{C.}}} & (5) \end{matrix}$

(dλ_(G)/dT represents a temperature coefficient of a Bragg wavelength, and

dλ_(TM)/dT represents a temperature coefficient of a wavelength satisfying a phase condition of an external resonator laser in the formula (5).)

According to a preferred embodiment, the following formulas (6) to (8) are satisfied, L _(WG)≦600 μm  (6) 1 μm≦L _(g)≦10 μm  (7) 20 μm≦L _(m)≦100 μm  (7)

(L_(WG) represents a length of the grating device in the formula (6).

L_(g) represents a distance between an emitting face of the light source and the incident face of the optical waveguide layer in the formula (7).

L_(m) represent a length of the propagating portion in the formula (8).)

According to the present invention, it is possible to reduce the mode hopping, to improve the stability on wavelength and to reduce the deviation of the optical power without the use of a Peltier device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view schematically showing an external resonator type light emitting system.

FIG. 2 is a cross sectional view of a grating device.

FIG. 3 is a perspective view schematically showing the grating device.

FIG. 4 is a cross sectional view showing another grating device.

FIG. 5 is a diagram for illustrating pattern of mode hopping according to a prior art.

FIG. 6 is a diagram for illustrating pattern of mode hopping according to a prior art.

FIG. 7 is a diagram for illustrating pattern of mode hopping according to the inventive example.

FIG. 8 shows reflection characteristics (gain condition) and phase condition in a prior structure.

FIG. 9 shows reflection characteristics (gain condition) and phase condition in a structure of the invention.

EMBODIMENTS OF THE INVENTION

An external resonator type light emitting system 1, schematically shown in FIG. 1, includes a light source 1 oscillating a semiconductor laser light, and a grating device 9. The light source 2 and grating device 9 are mounted on a common mount 3.

The light source 2 includes an active layer 5 oscillating the semiconductor laser light. According to the present embodiment, the active layer 5 is provided on a substrate 4. A reflection film 6 is provided on an outer end face of the substrate 4, and a antireflection layer 7A is formed on an end face of the active layer 5 on the side of the grating device.

As shown in FIGS. 1 and 3, in the grating device 7, it is provided an optical waveguide including an incident face 11 b, to which a semiconductor laser light A is incident, and an emitting face 11 b of emitting emission light B of a desired wavelength. C represents reflected light. A Bragg grating 12 is formed in the optical waveguide 11. A propagating portion 13 without a diffraction grating is provided between the incident face 11 a of the optical waveguide 11 and the Bragg grating 12, and the propagating portion 13 opposes to the active layer 5 through a spacing 14. 7B represents an antireflection film provided on the side of the incident face of the optical waveguide 11, and 7C represents an antireflection film provided on the side of the emitting face of the optical waveguide 11. According to the present example, the optical waveguide 11 is of a ridge type optical waveguide, and provided on a substrate 10. The optical waveguide 11 may be formed on the same face or on the opposing face as the Bragg grating 12.

The reflectance of each of the antireflection films 7A, 7B and 7C is smaller than, and may preferably be 0.1 percent or lower of, a reflectance value of the Bragg grating.

As shown in FIG. 2, according to the present example, a high refractive index layer 11 is formed on the substrate 10 through an adhesive layer 15 and a lower buffer layer 16, and an upper buffer layer 17 is formed on the high refractive index layer 11. For example, a pair of ridge grooves 19 is formed in the high refractive index layer 11, and a ridge type optical waveguide 18 is formed between the ridge grooves. In this case, the Bragg grating may be formed on a flat face 11 a or face 11 b. On the viewpoint of reducing deviation of shape of the Bragg grating or ridge groove, the Bragg grating is preferably formed on the face 11 a so that the Bragg grating and ridge grooves 19 are provided on the opposite sides of the substrate.

Further, according to a device 9A shown in FIG. 4, the high refractive index layer 11 is formed on the substrate 10 through the adhesive layer 15 and lower buffer layer 16, and the upper buffer layer 17 is formed on the high refractive index layer 11. For example a pair of the ridge grooves 19 is formed on the side of the substrate 10 in the high refractive index layer 11, and the ridge type optical waveguide 18 is formed between the ridge grooves 19. In this case, the Bragg grating may be formed on the side of the flat face 11 a or on the face 11 b with the ridge grooves formed. On the viewpoint of reducing the deviation of shape of the Bragg grating or ridge groove, the Bragg grating may preferably be formed on the side of the flat face 11 a so that the Bragg grating and ridge grooves 19 are provided on the opposite sides of the substrate. Further, the upper buffer layer 17 may be omitted, and in this case, air layer can be directly contacted with the grating. It is thus possible to increase a difference of the refractive indices in the cases that the grating groove is present and absent, so that it is possible to make the reflectance larger with the grating having a smaller length.

As the light source, it is preferred a laser of a GaAs series material or InP series material having high reliability. As an application of the inventive structure, for example, in the case that a non-linear optical device is utilized to oscillate green-light laser as a second harmonic wave, it is to be used laser of GaAs series oscillating at a wavelength around 1064 nm. As the reliability of the GaAs series or InP series laser is excellent, it is possible to realize a light source such as a laser array or the like composed of lasers arranged one-dimensionally. It may be used a super luminescence diode or a semiconductor optical amplifier (SOA). Further, the material and wavelength of the active layer may be appropriately selected.

The ridge type optical waveguide may be obtained by physically processing and shaping with, for example, grinding by means of a peripheral cutting edge or laser ablation.

The Bragg grating may be formed by physical or chemical etching as follows.

Specifically, a metal film such as Ni or Ti is formed on the substrate of a high refractive index, and windows are periodically formed by photolithography to form a etching mask. Thereafter, a dry etching system, such as a reactive ion etching system, is utilized to form the grating grooves periodically. At last, the metal mask is removed to form it.

In the high refractive index layer, for further improving the resistance against optical damage of the optical waveguide, it may be contained one or more metals selected from the group consisting of magnesium (Mg), zinc (Zn), scandium (Sc) and indium (In), and in this case, magnesium is most preferred. Further, in the crystal, it may be contained a rare earth element as a dopant. The rare earth element may preferably be Nd, Er, Tin, Ho, Dy or Pr.

The material of the adhesive layer may be an inorganic adhesive, or an organic adhesive, or a combination of the inorganic and organic adhesives.

Further, the high refractive index layer 11 may be formed by a film-forming method on a supporting body. Such film-forming method includes sputtering, vapor deposition or CVD. In this case, the above described adhesive layer is not necessary.

Specific material of the supporting body is not particularly limited, and includes lithium niobate, lithium tantalate, a glass such as quartz glass, quartz, Si or the like.

The reflectance of the antireflective film is necessarily lower than the reflectance of the grating. The material of the film forming the antireflective film includes a film formed by lamination of oxides such as silicon dioxide, tantalum pentoxide or the like and a metal.

Further, the end faces of the light source device and grating device may be cut in an inclined direction for reducing the reflection at the end faces, respectively. Further, although the grating device and supporting body may be joined by fixing by adhesion according to the example of FIG. 2, they may be directly joined with each other.

The meaning of the conditions defined in the formulas (1) to (8) will be further described below.

As mathematical formulas are abstract and difficult to understand, however, typical embodiments of a prior art and the present invention will be directly compared with each other first to describe the characteristics of the present invention. The conditions of the present invention will be then described.

First, condition for oscillating a semiconductor laser is decided on the gain condition and phase condition, as the following formula. (C _(out) ²)⁴ |r ₁ ∥r ₂|exp{(ζ_(t) g _(th)−α_(a))L _(a)−α_(b) L _(b)}×exp{j(−φ₁−φ₂−2βL _(a))}=1  (2-1)

The gain condition is expressed as the following formula from the formula (2-1).

$\begin{matrix} {{\zeta_{t}g_{th}} = {{\alpha_{a}L_{a}} + {\alpha_{b}L_{b}} + {\frac{1}{L_{a}}{\ln\left( \frac{1}{{r_{1}}\mspace{11mu}{r_{2}}C_{out}^{2}} \right)}}}} & {{Formula}\mspace{14mu}\left( {2\text{-}2} \right)} \end{matrix}$

Besides, αa and αb are loss coefficients of the active layer and grating layer, respectively, La and Lb are lengths of the active layer and grating layer, respectively, r1 and r2 are reflectances of a mirror (r2 represents a reflectance of the grating), Cout represents a connection loss of the grating device and light source, ζ_(t)g_(th) represents a gain threshold value of a laser medium, φ1 represents an amount of change of phase due to a reflection mirror on the side of the laser, and φ2 represents an amount of change of phase in the grating portion.

The formula (2-2) indicates that laser oscillation occurs in the case that the gain ζ_(t)g_(th) (gain threshold value) of the laser medium exceeds the loss. The gain curve (dependency on wavelength) of the laser medium provides a full width at half maximum of 50 nm or larger and exhibits broad characteristics. Further, the loss part (right column) shows hardly any dependency on wavelength other than the reflectance of the grating, so that the gain condition is decided on the grating. As a result, as shown in the comparison table, the gain condition can be evaluated only by the grating.

On the other hand, the phase condition is as shown in the following formula from the formula (2-1). However, φ1 becomes zero. φ₂+2βL _(a)=2pπ (p represents an integer)  Formula (2-3)

As to the external resonator type laser, it has been commercialized those utilizing an external resonator including quartz glass optical waveguide or FBG. According to prior design concept, as shown in table 1 and FIGS. 5 and 6, the reflection characteristic of the grating was Δλg of about 0.2 nm and a reflectance of 10 percent. The length of the grating portion was thereby made 1 mm. On the other hand, as to the phase condition, the wavelength satisfying it takes discrete values and it is designed so that the formula (2-3) is satisfied at two or three points within Δλg. It becomes thereby necessary the active layer of the laser medium whose length is large, and it has been used the active layer having a length of 1 mm or larger.

TABLE 1 Prior structure Present invention Reflection FIG. 8 FIG. 9 Characteristics (gain condition) and Phase condition Material FBG, LN (used for ordinary glass waveguide light), GnAs, Ta₂O₅, ZnO, Al₂O₃ Length of grating Comparative Example: 100 μm Lb Example: 1 mm Length of LD Comparative Example: 300 μm Active Layer Example: 2.1 mm Mode hopping Comparative Example: 60° C. Temperature Example: 5° C. (operational temperature range) Change of wavelength 0.01 nm/° C. 0.05 nm/° C. Deviation of power Deviation of power 3% or smaller by mode hopping: 5% or larger Notes Temperature control Peltier device is not needed with Peltier device is needed

In the case of a glass waveguide or FBG, the dependency λg on temperature is very small, and dλ_(G)/dT becomes about 0.01 nm/° C. As a result, the external resonator type laser has the characteristics of stability on wavelength.

Contrary to this, the dependency of the wavelength satisfying the phase condition on temperature is large and dλ_(G)/dT is 0.05 nm/° C., and the difference reaches 0.04 nm/° C.

Generally, the temperature T_(mh) at which the mode hopping takes place can be considered as the following formula based on the non-patent document 1 (It is provided that Ta=Tf).

ΔG_(TM) is a spacing (longitudinal mode spacing) of the wavelengths satisfying the phase condition of the external resonator type laser.

$\begin{matrix} {T_{m\; h} = \frac{\Delta\; G_{T\; M}}{{\frac{\mathbb{d}\lambda_{G}}{\mathbb{d}T} - \frac{\mathbb{d}\lambda_{T\; M}}{\mathbb{d}T}}}} & {{Formula}\mspace{14mu}\left( {2\text{-}4} \right)} \end{matrix}$

As a result, T_(mh) becomes about 5° C. according to a prior art, so that it is susceptible to the mode hopping. In the case that the mode hopping occurs, the power is deviated based on the reflection characteristics of the grating by 5 percent or more.

As described above, in actual operation, a Peltier device has been used to perform temperature control in the prior external resonator type laser utilizing the glass waveguide or FBG.

Contrary to this, the present invention utilizes the grating device in which the denominator of the formula (2-4) becomes small as a precondition. It is needed that the denominator of the formula (2-4) is made 0.03 nm/° C. or lower, and specific material may preferably be gallium arsenide (GaAs), lithium niobate (ordinary light), tantalum oxide (Ta₂O₅), zinc oxide (ZnO), or aluminum oxide (Al₂O₃). For example, in the case that lithium niobate (ordinary light) is used, that Δλ_(G) is designed at about 1.3 nm and that the length of the active layer is made 250 μm for making two wavelengths satisfying the phase condition are present within Δλ_(G), ΔG_(TM) becomes 1.2 nm and T_(mh) becomes 60° C. for example, so that it is possible to enlarge the operational temperature range. FIG. 7 shows this example.

That is, according to the inventive structure, although the oscillating wavelength is changed at 0.05 nm/° C. based on the temperature characteristics of the grating with respect to the temperature change, it is possible to make the mode hopping difficult to take place. According to the inventive structure, the length Lb of the grating is made 100 μm for enlarging Δλ_(G), and La is made 250 μm for enlarging ΔG_(TM).

Besides, the difference over the non-patent document 6 is supplemented.

The present invention is to realize the non-dependency on temperature by making the temperature coefficient of the wavelength of the grating closer to the temperature coefficient of the longitudinal mode, so that it is possible to make the resonator structure compact without the necessity of an additional part. According to the patent document 6, each parameter is described as follows, which is within a range of a prior art.

Δλ_(G)=0.4 nm

Spacing of longitudinal mode ΔG_(TM) 0.2 nm

Length of grating Lb=3 mm

Length of LD active layer=600 μm

Length of propagating portion=1.5 mm

Each condition of the present invention will be described further below.

The full width at half maximum Δλ_(G) in a peak of Bragg reflectance is made 0.8 nm or higher (formula 1). λ_(G) represents Bragg wavelength. That is, as shown in FIGS. 5, 6 and 7, in the case that the horizontal axis is assigned to the reflection wavelength by the Bragg grating and the vertical axis is assigned to the reflectance, the wavelength at which the reflectance takes the maximum is assigned to the Bragg wavelength. Further, in the peak whose center is positioned at the Bragg wavelength, a difference of two wavelengths at which the reflectance takes a half of the peak maximum is assigned to a full width at half maximum Δλ_(G).

The full width at half maximum Δλ_(G) at the peak of the Bragg reflectance is made 0.8 nm or larger so that the peak of the reflectance is made broad as shown in FIG. 7. On the viewpoint, the full width at half maximum Δλ_(G) may preferably be made 1.2 nm or larger and more preferably be made 1.5 nm or larger. Further, full width at half maximum Δλ_(G) may preferably be made 2 nm or smaller.

The length Lb of the Bragg grating is made 500 μm or smaller (formula 2). The length Lb of the Bragg grating is a length of the grating in the direction of an optical axis of light propagating in the optical wave guide. It is a precondition of the inventive design concept to shorten the length Lb of the Bragg grating to 500 μm or smaller, which is shorter than that in a prior art. On the viewpoint, the length Lb of the Bragg grating may preferably be made 300 μm or smaller.

The length La of the active layer is also made 500 μm or smaller (formula 3). It is also a precondition of the inventive design concept to shorten the length La of the active layer than that in a prior art. On the viewpoint, the length La of the active layer may preferably be made 300 μm or smaller. Further, the length La of the active layer may preferably be made 150 μm or larger.

The refractive index n_(b) of a material forming the Bragg grating is made 1.8 or higher (formula 4). According to a prior art, it has been generally used a material having a lower refractive index such as quartz. According to the concept of the present invention, the refractive index of the material forming the Bragg grating is made higher. The reason is that the material having a larger refractive index provides a larger dependency of the refractive index on temperature, and that T_(mh) of the formula (2-4) can be made larger. On the viewpoint, n_(b) may more preferably be 1.9 or higher. Further, although the upper limit of n_(b) is not particularly defined, it may preferably be 4 or lower because the formation of the grating may be difficult in the case that the grating pitch is too small.

In addition to this, the condition defined in the formula (5) is important.

In the formula (5), dλ_(G)/dT represents a temperature coefficient of the Bragg wavelength.

Further, λ_(TM)/dT represents a temperature coefficient of wavelength satisfying the phase condition of the external resonator laser.

Here, λ_(TM) represents a wavelength satisfying the phase condition of the external resonator laser, that is, the wavelength satisfying the phase condition of the formula (2-3) as described above. This is called “longitudinal mode” in the specification.

The longitudinal mode will be supplemented below.

Since φ2+2βLa=2p π and β=2 π/λ according to the formula (2-3), λ satisfying them is assigned to λ_(TM). φ2 represents a change of phase of the Bragg grating, and is calculated according to the following formula.

$\begin{matrix} {r_{2} = {\frac{{- j}\;\kappa\mspace{11mu}{\tanh\left( {\gamma\; L_{b}} \right)}}{{\gamma + {\left( {{\alpha/2} + {j\;\delta}} \right)\;{\tanh\left( {\gamma\; L_{b}} \right)}}}\;} \equiv {{r_{2}}{\exp\left( {{- j}\;\phi} \right)}}}} & \; \end{matrix}$

ΔG_(TM) represents a spacing (longitudinal mode spacing) of the wavelengths satisfying the phase condition of the external resonator laser. Since a plurality of λ_(TM) are present, it means a difference of a plurality of λ_(TM).

Therefore, by satisfying the formula (5), it is possible to make the temperature of mode hopping higher to prevent the mode hopping in a practical view. The numerical value of the formula (5) may more preferably be made 0.025 or lower.

The length L_(WG) of the grating device is made 600 μm or smaller (formula 6). It is also a precondition of the present invention to shorten it as Lb. On the viewpoint, L_(WG) may preferably be 400 μm or smaller and more preferably be 300 μm or smaller. Further. L_(WG) may preferably be 50 μm or larger.

The distance Lg between the emitting face of the light source and incident face of the optical wave guide is made 1 μm or larger and 10 μm or smaller (formula 7). The stable oscillation can thereby be realized.

The length Lm of the propagation portion is made 20 μm or larger and 100 μm or smaller (formula 8). The sable oscillation can thereby be realized,

EXAMPLES Inventive Example

It was fabricated the system shown in FIGS. 1 to 3.

Specifically, Ni film was formed on a substrate composed of z-plate of lithium niobate crystal doped with MgO, and photolithography technique was utilized to produce grating pattern in the direction of y-axis. Thereafter, reactive ion etching was performed using the Ni pattern as a mask to form grating grooves at a pitch spacing A of 180 nm and a length Lg of 100 μm. The depth of the grating groove was 300 nm. Further, for forming the optical waveguide for propagation in y-axis, the grooves each having a width Wm of 3 μm and Tr of 0.5 μm were processed in the grating portion by means of excimer laser. Further, the buffer layer 17 made of SiO₂ and of 0.5 μm was formed by a sputtering system on the face with the grooves formed thereon, and a black LN substrate was used as the supporting body to adhere the face with the grating formed thereon.

Then, the black LN substrate was adhered onto a polishing surface plate and the back face of the LN substrate with the grating was subjected to precision polishing to a thickness (Ts) of 1 μm. Thereafter, it was removed off from the surface plate and the buffer layer 16 composed of SiO₂ and of 0.5 μm was formed an the polished face by sputtering.

Thereafter, the assembly was cut into bars by means of a dicing equipment and both end faces of the bar was subjected to optical polishing. AR coatings of 0.1% or lower were formed on the both end faces, respectively, and the bar was cut into chips to produce the grating devices. The size of the device was a width of 1 mm and a length L_(WG) of 500 μm.

As to the optical characteristics of the grating device, a super luminescence diode (SLD), a light source for wide band wavelength, was used to input light into the grating device and its output light was analyzed by an optical spectrum analyzer to evaluate the reflection characteristics based on the transmitting characteristics. As a result, it was obtained the characteristics that the central wavelength was 800 nm, maximum reflectance was 3 percent and full width at half maximum Δλ_(G) was 1.3 nm with respect to polarized light (ordinary light) in the direction of x axis.

Then, for evaluating the characteristics of the external resonator laser utilizing the grating device, the laser module was mounted as shown in FIG. 1. As the light source device, it was prepared one having a GaAs series laser structure, in which a high refractive index film was provided on its one end face and an AR coating of a reflectance of 0.1% was provided on the other end face.

Specification of the Light Source Device:

Central wavelength; 800 nm

Length of laser device; 250 μm

Specification of Mounting

Lg: 3 μm

Lm; 20 μm

After mounting the module, the device was driven under current control (ACC) without utilizing a Peltier device to obtain the laser characteristics of a central wavelength of 800 nm and an output power of 50 mW. Further, the module was set in a thermostatic bath for evaluating the operational temperature range to measure the temperature dependency of the laser oscillating wavelength, the temperature with the mode hopping occurred and the deviation of output power. As a result, the temperature coefficient of the oscillating wavelength was 0.05 nm/° C., the temperature of the mode hopping was 60° C., and the deviation of the output power was within 1 percent (FIGS. 5 and 7).

Comparative Example

As the Inventive Example, Ni film was formed on a substrate composed of z-plate of lithium niobate crystal doped with MgO, and photolithography technique was utilized to produce grating pattern in the direction of y-axis. Thereafter, reactive ion etching was performed using the Ni pattern as a mask to form grating grooves at a pitch spacing A of 180 nm and a length Lg of 1000 μm. The depth of the grating grooves was 300 nm. Further, for forming the optical waveguide for propagation in y-axis, the grooves each having a width Wm of 3 μm and Tr of 0.5 μm were processed in the grating portion by means of excimer laser.

Further, the buffer layer 17 made of SiO₂ and of 0.5 μm was formed by a sputtering system on the side with the grooves formed thereon, and a black LN substrate was used as the supporting body to adhere the face with the grating formed thereon.

Then, the black LN substrate was adhered onto a polishing surface plate and the back face of the LN substrate with the grating was subjected to precision polishing to a thickness (Ts) of 1 μm. Thereafter, it was removed off from the surface plate and the buffer layer 16 composed of SiO₂ and of 0.5 in was formed on the polished face by sputtering. Thereafter, the assembly was cut into bars by means of a dicing equipment and both end faces of the bar was subjected to optical polishing. AR coatings of 0.1% or lower were formed on the both end faces, respectively, and the bar was cut into chips to produce the grating devices. The size of the device was a width of 1 mm and a length L_(WG) of 1500 μm.

As to the optical characteristics of the grating device, a super luminescence diode (SLD), a light source for wide band wavelength, was used to input light into the grating device and its output light was analyzed by an optical spectrum analyzer to evaluate the reflection characteristics based on the transmitting characteristics. As a result, it was obtained the characteristics that the central wavelength was 800 nm, maximum reflectance was 10 percent and full-width at half maximum Δλ_(G) was 0.2 nm with respect to polarized light (ordinary light) in the direction of x axis.

Then, for evaluating the characteristics of the external resonator laser utilizing the grating device, the laser module was mounted as shown in a separate figure. As the light source device, it was prepared one having a GaAs series laser structure, in which a high refractive index film was provided on its one end face and an AR coating of a reflectance of 0.1% was provided on the other end face.

Specification of the Light Source Device:

Central wavelength; 800 nm

Length of laser device; 1000 μm

Specification of Mounting

Lg: 3 μm

Lm; 20 μm

After mounting the module, the device was driven under current control (ACC) without utilizing a Peltier device to obtain the laser characteristics of a central wavelength of 800 nm and an output power of 50 mW. Further, the module was set in a thermostatic bath for evaluating the operational temperature range to measure the temperature dependency of the laser oscillating wavelength, the temperature with the mode hopping occurred and the deviation of output power. As a result, the temperature coefficient of the oscillating wavelength was 0.05 nm/° C., the temperature of the mode hopping was 6° C., and the deviation of the output power was 10 percent. 

The invention claimed is:
 1. An external resonator type light emitting system comprising a light source oscillating a semiconductor laser light and a grating device providing an external resonator with said light source; wherein said light source comprises an active layer oscillating said semiconductor laser light; wherein said grating device comprises an optical waveguide comprising an incident face to which said semiconductor laser light is incident and an emitting face of emitting an emitting light having a desired wavelength, a Bragg grating formed in said optical waveguide, and a propagating portion provided between said incident face and said Bragg grating; and Δλ_(G)≧0.8 nm L _(b)≦500 μm L _(a)≦500 μm n _(b)≧1.8 wherein Δλ_(G) represents a full width at half maximum of a peak of a Bragg reflectance; L_(b) represents a length of said Bragg grating; L_(a) represents a length of said active layer; and n_(b) represents a refractive index of a material forming said Bragg grating; and wherein wherein dλ_(G)/dT represents a temperature coefficient of a Bragg wavelength; and dλ_(TM)/dT represents a temperature coefficient of a wavelength satisfying a phase condition of an external resonator laser.
 2. The system of claim 1, wherein L _(WG)≦600 μm; 1 μm≦L _(g)≦10 μm 20 μm≦L _(m)≦100 μm; wherein L_(WG) represents a length of said grating device; L_(g) represents a distance between an emitting face of said light source and said incident face of said optical waveguide; and L_(m) represent a length of said propagating portion.
 3. The system of claim 1, wherein said material of said Bragg grating is selected from the group consisting of gallium arsenide, lithium niobate single crystal, tantalum oxide, zinc oxide and aluminum oxide.
 4. The system of claim 1, wherein said light source and said grating device are optically connected to each other, and wherein a total of said length L_(b) of said Bragg grating, said length L_(a) of said active layer, a distance L_(g) between an emitting face of said light source and said incident face of said optical waveguide and a length L_(m) of said propagating portion is 910 μm or smaller.
 5. The system of claim 1, wherein a reflectance of said Bragg grating is higher than each of reflectances at a non-reflecting film on an end face of said active layer on the side of said grating device, at a non-reflecting film on said incident face of said optical waveguide and a non-reflecting film on said emitting face of said optical waveguide.
 6. The system of claim 1, further comprising a buffer layer provided on said optical waveguide.
 7. The system of claim 1, wherein said system is configured to prevent mode hopping without temperature control.
 8. The system of claim 1, wherein said optical waveguide comprises a ridge-type optical waveguide.
 9. The system of claim 1, wherein said light source comprises a GaAs series semiconductor.
 10. The system of claim 1, wherein said system is configured to oscillate said light in single mode. 